GALLIUM OXIDE THIN-FILMS - A NEW MATERIAL FOR HIGH-TEMPERATURE OXYGEN SENSORS

被引：176

作者：

FLEISCHER, M

MEIXNER, H

机构：

[1] Siemens AG, Research Laboratories, D-8000 Munich 83

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1991年 / 4卷 / 3-4期

关键词：

D O I：

10.1016/0925-4005(91)80148-D

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Semiconducting thin films from Ga2O3 sensitive to oxygen at temperatures of around 850-1000-degrees-C were produced by a sputtering technique. Their stable oxygen sensitivity is based on a bulk effect independent of the film thickness: the electrical conductivity of the films depends on the oxygen partial pressure according to a law of the form sigma approximately p(o)2 -1/4. The response times are in the range of seconds. With suitable temperature compensation, Ga2O3 thin films can be used as catalytically inactive oxygen sensors.

引用

页码：437 / 441

页数：5

共 9 条

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