OPTICAL MEASUREMENTS IN MOVPE-GROWN ZNSE/INP EPILAYERS

被引：2

作者：

COQUILLAT, D ^{[1
]}

BOUCHARA, D ^{[1
]}

ABOUNADI, A ^{[1
]}

RIBAYROL, A ^{[1
]}

LASCARAY, JP ^{[1
]}

CALAS, J ^{[1
]}

HAIDOUX, A ^{[1
]}

TOMASINI, P ^{[1
]}

TEDENAC, JC ^{[1
]}

MAURIN, M ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,PHYSICOCHIM MAT SOLIDES LAB,CNRS,URA 407,F-34095 MONTPELLIER,FRANCE

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1993年 / 180卷 / 02期

关键词：

D O I：

10.1002/pssb.2221800210

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The X-ray diffraction pattern of MOVPE-grown ZnSe/InP epilayers in the thickness range between 0.15 and 2.2 mum shows that the relaxation is obtained for a few monolayers. The splitting between light hole E(lh) and heavy hole E(hh) excitonic transitions is observed at 4.2 K by reflectivity and is explained in terms of thermoelastic strain due to the difference in the thermal expansion coefficients of layer and substrate. In addition photoluminescence is studied and shows neutral-donor-bound-exciton lines I2 and I2' as well as the neutral-acceptor-bound-exciton line I1.

引用

页码：383 / 389

页数：7

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