DETERMINING ENERGY-DISTRIBUTION OF PULSE-RADIATION-INDUCED CHARGE IN MOS STRUCTURES FROM RAPID ANNEALING MEASUREMENTS

被引：32

作者：

SIMONS, M

HUGHES, HL

机构：

[1] RES TRIANGLE INST,RESEARCH TRIANGLE PARK,NC 27709

[2] USN,RES LAB,WASHINGTON,DC 20390

来源：

关键词：

D O I：

10.1109/TNS.1972.4326846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：282 / 290

页数：9

共 16 条

[1]

AUBUCHON KG, 1971, IEEE NUCL S, VNS18, P117

[2]

Bube RH., 1960, PHOTOCONDUCTIVITY SO

DANCHENKO, V ;

DESAI, UD ;

BRASHEARS, SS .

[4]

Douglas RW., 1959, J SOC GLASS TECHNOL, V43, P147

[5] X-RAY INDUCED CONDUCTIVITY IN INSULATING MATERIALS [J].

FOWLER, JF .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1956, 236 (1207) :464-480

[6] PHOTOEMISSION OF HOLES FROM SILICON INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 152 (02) :780-&

[7] THERMOLUMINESCENCE AND COLOR CENTERS IN RF-SPUTTERED SIO2 FILMS [J].

HICKMOTT, TW .

[8]

HUGHES HL, 1971, 9 ANN P REL PHYS

[9]

HUGHES HL, 1972, IEEE T NUCL SCI, VNS19

[10]

LELL E, 1966, PROGRESS CERAMIC SCI, V4