ENHANCED CARRIER DIFFUSION LENGTHS AND PHOTON TRANSPORT IN ALXGA1-XAS/GAAS STRUCTURES

被引：9

作者：

BRADSHAW, JL ^{[1
]}

CHOYKE, WJ ^{[1
]}

DEVATY, RP ^{[1
]}

MESSHAM, RL ^{[1
]}

机构：

[1] WESTINGHOUSE ELECT CORP,CTR RES & DEV,PITTSBURGH,PA 15235

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345656

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several novel features are observed in the low-temperature photoluminescence spectra of AlxGa1-xAs layers grown on GaAs by metalorganic chemical vapor deposition. GaAs substrate luminescence spectra are observed through AlxGa1-xAs layers as thick as 22 μm. Both carrier diffusion to the substrate and AlxGa 1-xAs luminescence are identified as the excitation mechanisms of the GaAs luminescence, and a minority-carrier diffusion length of 10 μm is estimated. The presence of photon recycling in the AlxGa 1-xAs layers is demonstrated by comparison of photoluminescence (PL) spectra for layers with and without GaAs substrates, as well as PL examination of two AlxGa1-xAs heterostructures.

引用

页码：1483 / 1491

页数：9

共 41 条

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