REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS

被引:58
作者
ASPNES, DE
BHAT, R
COLAS, E
KERAMIDAS, VG
KOZA, MA
STUDNA, AA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.575871
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:711 / 716
页数:6
相关论文
共 35 条
[1]   ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY [J].
AOYAGI, Y ;
DOI, A ;
IWAI, S ;
NAMBA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1460-1464
[2]   ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW LETTERS, 1985, 54 (17) :1956-1959
[3]   OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690
[4]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332
[5]   ULTRAVIOLET-ASSISTED GROWTH OF GAAS [J].
BALK, P ;
FISCHER, M ;
GRUNDMANN, D ;
LUCKERATH, R ;
LUTH, H ;
RICHTER, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1453-1459
[6]  
Berkman S., 1978, Heteroepitaxial semiconductors for electronic devices, P264
[7]   THE GROWTH AND CHARACTERIZATION OF AIGAAS USING DIMETHYL ALUMINUM-HYDRIDE [J].
BHAT, R ;
KOZA, MA ;
CHANG, CC ;
SCHWARZ, SA ;
HARRIS, TD .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :7-10
[8]   INSITU, REAL-TIME DIAGNOSTICS OF OMVPE USING IR-DIODE LASER SPECTROSCOPY [J].
BUTLER, JE ;
BOTTKA, N ;
SILLMON, RS ;
GASKILL, DK .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :163-171
[9]  
Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[10]   REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (100) GAAS [J].
COLAS, E ;
ASPNES, DE ;
BHAT, R ;
KERAMIDAS, VG ;
KOZA, MA ;
STUDNA, AA .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :931-931