THE EFFECT OF ION INDUCED ROUGHNESS ON THE DEPTH RESOLUTION OF AUGER SPUTTER PROFILING OF MNOS DEVICES

被引:4
作者
ADACHI, T [1 ]
HELMS, CR [1 ]
机构
[1] SONY CORP,RES CTR,YOKOHAMA,KANAGAWA 240,JAPAN
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 01期
关键词
D O I
10.1116/1.571002
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:119 / 119
页数:1
相关论文
共 3 条
[1]   SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE [J].
COOK, CF ;
HELMS, CR ;
FOX, DC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :44-46
[2]   STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING [J].
HELMS, CR ;
JOHNSON, NM ;
SCHWARZ, SA ;
SPICER, WE .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7007-7014
[3]   MODEL OF ION KNOCK-ON MIXING WITH APPLICATION TO SI-SIO2 INTERFACE STUDIES [J].
SCHWARZ, SA ;
HELMS, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02) :781-783