SPUTTER-INDUCED ROUGHNESS IN THERMAL SIO2 DURING AUGER SPUTTER PROFILING STUDIES OF THE SI-SIO2 INTERFACE

被引：36

作者：

COOK, CF ^{[1
]}

HELMS, CR ^{[1
]}

FOX, DC ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：44 / 46

页数：3

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