NEW STUDIES OF SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING

被引：50

作者：

HELMS, CR ^{[1
]}

SPICER, WE ^{[1
]}

JOHNSON, NM ^{[1
]}

机构：

[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 25卷 / 09期

关键词：

D O I：

10.1016/0038-1098(78)90787-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：673 / 676

页数：4

共 11 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[2] SI-SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY [J].

BLANC, J ;

BUIOCCHI, CJ ;

ABRAHAMS, MS ;

HAM, WE .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :120-122

[3] FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE [J].

DISTEFANO, TH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :856-859

[4] PHOTOEMISSION STUDIES OF SURFACE-STATES AND OXIDATION OF GROUP-IV SEMICONDUCTORS [J].

GARNER, CM ;

LINDAU, I ;

MILLER, JN ;

PIANETTA, P ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :372-375

[5]

HELMS CR, UNPUBLISHED

[6] PHASE SEPARATION IN SILICON OXIDES AS SEEN BY AUGER-ELECTRON SPECTROSCOPY [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

APPLIED PHYSICS LETTERS, 1975, 27 (08) :452-454

[7] AUGER ANALYSIS OF SIO2-SI INTERFACE [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3028-3037

[8] AUGER DEPTH PROFILING OF INTERFACES IN MOS AND MNOS STRUCTURES [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :849-855

[9] STOICHIOMETRY OF SIO2-SI INTERFACIAL REGIONS .1. ULTRATHIN OXIDE-FILMS [J].

RAIDER, SI ;

FLITSCH, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :58-58

[10]

SCHWARZ SA, UNPUBLISHED

← 1 2 →