学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
STOICHIOMETRY OF SIO2-SI INTERFACIAL REGIONS .1. ULTRATHIN OXIDE-FILMS
被引:67
作者
:
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
RAIDER, SI
[
1
]
FLITSCH, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
FLITSCH, R
[
1
]
机构
:
[1]
IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY
|
1976年
/ 13卷
/ 01期
关键词
:
D O I
:
10.1116/1.568955
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:58 / 58
页数:1
相关论文
共 1 条
[1]
ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON
FLITSCH, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
FLITSCH, R
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
RAIDER, SI
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1975,
12
(01):
: 305
-
308
←
1
→
共 1 条
[1]
ELECTRON MEAN ESCAPE DEPTHS FROM X-RAY PHOTOELECTRON-SPECTRA OF THERMALLY OXIDIZED SILICON DIOXIDE FILMS ON SILICON
FLITSCH, R
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
FLITSCH, R
RAIDER, SI
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
RAIDER, SI
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY,
1975,
12
(01):
: 305
-
308
←
1
→