FIELD-DEPENDENT INTERNAL PHOTOEMISSION PROBE OF ELECTRONIC-STRUCTURE OF SI-SIO2 INTERFACE

被引：56

作者：

DISTEFANO, TH ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1976年 / 13卷 / 04期

关键词：

D O I：

10.1116/1.569003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：856 / 859

页数：4

共 18 条

[1] STUDIES OF SOLID SURFACES WITH 100 KEV 4HE+ AND H+ ION-BEAMS [J].

BUCK, TM ;

WHEATLEY, GH .

SURFACE SCIENCE, 1972, 33 (01) :35-&

[2] PRINCIPLES AND APPLICATIONS OF ION-BEAM TECHNIQUES FOR ANALYSIS OF SOLIDS AND THIN-FILMS [J].

CHU, WK ;

MAYER, JW ;

NICOLET, MA ;

BUCK, TM ;

AMSEL, G ;

EISEN, F .

THIN SOLID FILMS, 1973, 17 (01) :1-41

[3]

DAVIES JA, 1967, CAN J PHYS, V45, P407

[4] BARRIER ENERGIES IN METAL-SILICON DIOXIDE-SILICON STRUCTURES [J].

DEAL, BE ;

SNOW, EH ;

MEAD, CA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (11-1) :1873-&

[5] PHOTOEMISSION OF ELECTRONS FROM N-TYPE DEGENERATE SILICON INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 152 (02) :785-+

[6] PHOTOEMISSION OF ELECTRONS FROM SILICON AND GOLD INTO SILICON DIOXIDE [J].

GOODMAN, AM .

PHYSICAL REVIEW, 1966, 144 (02) :588-&

[7]

IRENE E, UNPUBLISHED

[8] AUGER DEPTH PROFILING OF INTERFACES IN MOS AND MNOS STRUCTURES [J].

JOHANNESSEN, JS ;

SPICER, WE ;

STRAUSSER, YE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :849-855

[9] THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J].

KANE, EO .

PHYSICAL REVIEW, 1962, 127 (01) :131-&

[10] BARRIER LOWERING AND FIELD PENETRATION AT METAL-DIELECTRIC INTERFACES - (AL-SI02 - MOS STRUCTURES - E) [J].

MEAD, CA ;

SNOW, EH ;

DEAL, BE .

APPLIED PHYSICS LETTERS, 1966, 9 (01) :53-&

← 1 2 →