INFRARED DETECTION BY SCHOTTKY BARRIERS IN EPITAXIAL PBTE

被引：27

作者：

LOGOTHETIS, EM

HOLLOWAY, H

VARGA, AJ

WILKES, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1971年 / 19卷 / 09期

关键词：

D O I：

10.1063/1.1653934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：318 / +

页数：1

相关论文

共 4 条

[1] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].

DONNELLY, JP ;

HARMAN, TC ;

FOYT, AG .

APPLIED PHYSICS LETTERS, 1971, 18 (06) :259-&

[2] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[3]

HOLLOWAY H, TO BE PUBLISHED

[4] LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PBTE AND PB0.8SN0.2TE [J].

NILL, KW ;

CALAWA, AR ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1970, 16 (10) :375-&