EPITAXIAL-GROWTH OF CADMIUM-SULFIDE LAYERS ON INDIUM-PHOSPHIDE FROM AQUEOUS AMMONIA SOLUTIONS

被引：37

作者：

LINCOT, D ^{[1
]}

ORTEGABORGES, R ^{[1
]}

FROMENT, M ^{[1
]}

机构：

[1] UNIV PARIS 06,CNRS,UPR 15,F-75252 PARIS 05,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of cadmium sulfide on indium phosphide monocrystals has been achieved by using chemical deposition from cadmium ammonia-thiourea aqueous solutions. The epitaxial growth takes place on InP ((111) over bar) substrates with-the c axis of hexagonal CdS perpendicular to the surface. The epitaxy relations are determined by means of electron diffraction techniques. The deposition conditions appear to be flexible with reaction temperatures ranging from 60 to 90 degrees C, and growth rates about 0.1-0.5 mu m h(-1).

引用

页码：569 / 571

页数：3

共 14 条

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