GE-EPITAXIAL-PBS HETEROJUNCTIONS

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 217 - 232

[3] AN OPTICAL CELL FOR USE WITH LIQUID HELIUM [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1952, 23 (08) : 421 - 424

[4] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[5] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[6] GUBNER A, PRIVATE COMMUNICATIO

[7] SILICON-GERMANIUM N-P HETEROJUNCTION [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (11): : 1331 - &

[8] PHOTOELECTRIC EMISSION AND WORK FUNCTIONS OF INSB, GAAS, BI2TE3 AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 205 - &

[9] GAAS-INSB N-N HETEROJUNCTION - A SINGLE-CRYSTAL SCHOTTKY BARRIER (INTERFACE ALLOY JUNCTION BARRIER HEIGHT 0.38 EV E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (07) : 144 - &

[10] HOLMES PJ, 1962, ELECTROCHEMISTRY SEM, P368

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] CDTE SOLAR CELLS AND PHOTOVOLTAIC HETEROJUNCTIONS IN II-VI COMPOUNDS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (03) : 217 - 232

[3] AN OPTICAL CELL FOR USE WITH LIQUID HELIUM [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1952, 23 (08) : 421 - 424

[4] FIELD-EFFECT INTERFACE CONDUCTANCE IN GE-GAAS N-N HETEROJUNCTIONS ( GE-GAAS HETEROJUNCTION INTERFACE CONDUCTANCE EFFECT OF ELECTRIC FIELD ON AC + DC TECHNIQUES E ) [J]. APPLIED PHYSICS LETTERS, 1964, 4 (01) : 3 - &

[5] EFFECT OF CRYSTAL ORIENTATION ON GE-GAAS HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 612 - &

[6] GUBNER A, PRIVATE COMMUNICATIO

[7] SILICON-GERMANIUM N-P HETEROJUNCTION [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (11): : 1331 - &

[8] PHOTOELECTRIC EMISSION AND WORK FUNCTIONS OF INSB, GAAS, BI2TE3 AND GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (3-4) : 205 - &

[9] GAAS-INSB N-N HETEROJUNCTION - A SINGLE-CRYSTAL SCHOTTKY BARRIER (INTERFACE ALLOY JUNCTION BARRIER HEIGHT 0.38 EV E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (07) : 144 - &

[10] HOLMES PJ, 1962, ELECTROCHEMISTRY SEM, P368