GAAS-INSB N-N HETEROJUNCTION - A SINGLE-CRYSTAL SCHOTTKY BARRIER (INTERFACE ALLOY JUNCTION BARRIER HEIGHT 0.38 EV E)

被引：11

作者：

HINKLEY, ED

REDIKER, RH

JADUS, DK

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 6卷 / 07期

关键词：

D O I：

10.1063/1.1754207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：144 / &

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