PREPARATION OF NASICON THIN-FILMS BY DIP-COATING ON SI/SIO2 WAFERS AND CORRESPONDING C-V MEASUREMENTS

被引：24

作者：

HUANG, YL ^{[1
]}

CANEIRO, A ^{[1
]}

ATTARI, M ^{[1
]}

FABRY, P ^{[1
]}

机构：

[1] ECOLE NATL SUPER ELECTROCHIM & ELECTROMET GRENOBLE,ION & ELECTROCHIM SOLIDE LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

THIN SOLID FILMS | 1991年 / 196卷 / 02期

关键词：

D O I：

10.1016/0040-6090(91)90372-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dip-coating process, based on the sol-gel approach, has been studied for use in preparing Na+ Super Ionic Conductor (NASICON) thin films. Differential thermal analysis (DTA) and X-ray analysis indicate a crystallization temperature of about 700-degrees-C. The X-ray spectrum is consistent with that of NASICON ceramics. The first results obtained by the C-V method on electrolyte-oxide-semiconductor capacitors are very promising. To avoid crack initiation, the viscosity of the solution must be sufficiently low to give layer thicknesses less than 100 nm. Multidipping gives a better coating.

引用

页码：283 / 294

页数：12

共 33 条

[1]

[Anonymous], 1980, ELECTROCHEMISTRY SEM

[2] DIRECT DETECTION OF IMMUNOSPECIES BY CAPACITANCE MEASUREMENTS [J].