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DEVELOPMENT OF AN ION-SENSITIVE SOLID-STATE DEVICE FOR NEUROPHYSIOLOGICAL MEASUREMENTS
被引:1661
作者
:
BERGVELD, P
论文数:
0
引用数:
0
h-index:
0
BERGVELD, P
机构
:
来源
:
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING
|
1970年
/ BM17卷
/ 01期
关键词
:
D O I
:
10.1109/TBME.1970.4502688
中图分类号
:
R318 [生物医学工程];
学科分类号
:
0831 ;
摘要
:
引用
收藏
页码:70 / &
相关论文
共 5 条
[1]
INFLUENCE OF SUBSTRATE BIAS UPON AC CHARACTERISTICS OF MOS TRANSISTORS
BERGVELD, P
论文数:
0
引用数:
0
h-index:
0
机构:
Twente Inst. Tech., Enschede
BERGVELD, P
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(01)
: 72
-
&
[2]
BERGVELD P, 1968, IEEE BIOMED, VBM15, P102
[3]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
[4]
EISENMAN G, 1962, Biophys J, V2, P259
[5]
DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR
IHANTOLA, HKJ
论文数:
0
引用数:
0
h-index:
0
IHANTOLA, HKJ
MOLL, JL
论文数:
0
引用数:
0
h-index:
0
MOLL, JL
[J].
SOLID-STATE ELECTRONICS,
1964,
7
(06)
: 423
-
430
←
1
→
共 5 条
[1]
INFLUENCE OF SUBSTRATE BIAS UPON AC CHARACTERISTICS OF MOS TRANSISTORS
BERGVELD, P
论文数:
0
引用数:
0
h-index:
0
机构:
Twente Inst. Tech., Enschede
BERGVELD, P
[J].
PROCEEDINGS OF THE IEEE,
1969,
57
(01)
: 72
-
&
[2]
BERGVELD P, 1968, IEEE BIOMED, VBM15, P102
[3]
CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
SKLAR, M
论文数:
0
引用数:
0
h-index:
0
SKLAR, M
GROVE, AS
论文数:
0
引用数:
0
h-index:
0
GROVE, AS
SNOW, EH
论文数:
0
引用数:
0
h-index:
0
SNOW, EH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(03)
: 266
-
+
[4]
EISENMAN G, 1962, Biophys J, V2, P259
[5]
DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR
IHANTOLA, HKJ
论文数:
0
引用数:
0
h-index:
0
IHANTOLA, HKJ
MOLL, JL
论文数:
0
引用数:
0
h-index:
0
MOLL, JL
[J].
SOLID-STATE ELECTRONICS,
1964,
7
(06)
: 423
-
430
←
1
→