STRUCTURE AND ELECTRICAL-PROPERTIES OF THIN COPPER-FILMS DEPOSITED BY MOCVD

被引：12

作者：

ROBER, J

KAUFMANN, C

GESSNER, T

机构：

[1] Zentrum für Mikrotechnologien, Fakultät für Elektrotechnik und Informationstechnik, TU Chemnitz-Zwickau

来源：

APPLIED SURFACE SCIENCE | 1995年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(95)00108-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A low temperature CVD process for the blanket deposition of copper films using the metalorganic precursor Hexafluoroacetylacetonato Copper(I) Vinyltrimethylsilane (Cu(hfac)TMVS, CupraSelect(TM)) was developed and tested on different substrate materials. A liquid delivery system was applied for the dosage of the precursor. Film properties were determined by four-point probe, surface profilometer and scanning electron microscope (SEM). Deposition rates on the scale of 50 nm/min and film resistivities down to 2 mu Omega . cm were obtained depending on the process conditions and the substrate.

引用

页码：134 / 138

页数：5

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