A NEW METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION PROCESS FOR SELECTIVE COPPER METALLIZATION

被引：63

作者：

NORMAN, JAT ^{[1
]}

MURATORE, BA ^{[1
]}

DYER, PN ^{[1
]}

ROBERTS, DA ^{[1
]}

HOCHBERG, AK ^{[1
]}

DUBOIS, LH ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 17卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(93)90085-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It is widely predicted that copper will become the interconnect material of choice for future electrical microdevices fabricated below 0.25 mum scale. The low resistivity and high electromigration resistance of copper will enable these circuits to run faster and more reliably than with conventional aluminium alloy conductors. This presentation describes a new series of volatile liquid Cu(I) organometallic precursors that are shown to be suitable for the deposition of pure, adherent and highly conducting copper films by chemical vapor deposition. Deposition is selective towards conducting rather than insulating surfaces between 393 and 693 K with growth rates of 200 nm min-1 and grain sizes of 0.1 mum. The molecular mechanisms of both metallization and control of selectivity are discussed together with single-wafer-processing results.

引用

页码：87 / 92

页数：6

共 19 条

[1] LIGAND-STABILIZED COPPER(I) HEXAFLUOROACETYLACETONATE COMPLEXES - NMR-SPECTROSCOPY AND THE NATURE OF THE COPPER ALKENE BOND [J].