SELECTIVITY IN COPPER CHEMICAL VAPOR-DEPOSITION

被引：67

作者：

COHEN, SL

LIEHR, M

KASI, S

机构：

[1] IBM T. J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 13期

关键词：

D O I：

10.1063/1.107259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The fundamental surface chemistry underlying selectivity in copper chemical vapor deposition (CVD) from COD-Cu-hfac and Cu(hfac)2 has been determined. Both electronic and chemistry contributions strongly influence the precursor reactivity on oxide as compared to metal surfaces. These results have important implications regarding the role of surface preparation and cleaning for initiating and maintaining selective deposition.

引用

页码：1585 / 1587

页数：3

共 19 条

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