MECHANISM OF SURFACE SELECTIVITY IN ALUMINUM CHEMICAL VAPOR-DEPOSITION

[1] SURFACE ORGANOMETALLIC CHEMISTRY IN THE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FILMS USING TRIISOBUTYLALUMINUM - BETA-HYDRIDE AND BETA-ALKYL ELIMINATION-REACTIONS OF SURFACE ALKYL INTERMEDIATES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1989, 111 (05) : 1634 - 1644

[2] COOKE MJ, 1982, SOLID STATE TECHNOL, V25, P62

[3] MECHANISMS FOR SELECTIVITY LOSS DURING TUNGSTEN CHEMICAL VAPOR-DEPOSITION ON SI AND SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1739 - 1740

[4] KINETICS OF INTRAMOLECULAR 4-CENTER ELIMINATION OF ISOBUTYLENE FROM TRIISOBUTYLALUMINUM IN GAS PHASE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1969, 91 (11) : 2867 - &

[5] FLEMING CG, 1988, MATER RES SOC S P, V101, P183

[6] SELF-CONSISTENT MOLECULAR-ORBITAL METHODS .23. A POLARIZATION-TYPE BASIS SET FOR 2ND-ROW ELEMENTS [J]. JOURNAL OF CHEMICAL PHYSICS, 1982, 77 (07) : 3654 - 3665

[7] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[8] ALUMINUM FILMS PREPARED BY METAL ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1984, 114 (04) : 367 - 377

[9] Hariharan P.C., 1972, CHEM PHYS LETT, V66, P217

[10] Hehre W. J., 1986, AB INITIO MOL ORBITA, P1

[1] SURFACE ORGANOMETALLIC CHEMISTRY IN THE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FILMS USING TRIISOBUTYLALUMINUM - BETA-HYDRIDE AND BETA-ALKYL ELIMINATION-REACTIONS OF SURFACE ALKYL INTERMEDIATES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1989, 111 (05) : 1634 - 1644

[2] COOKE MJ, 1982, SOLID STATE TECHNOL, V25, P62

[3] MECHANISMS FOR SELECTIVITY LOSS DURING TUNGSTEN CHEMICAL VAPOR-DEPOSITION ON SI AND SIO2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1739 - 1740

[4] KINETICS OF INTRAMOLECULAR 4-CENTER ELIMINATION OF ISOBUTYLENE FROM TRIISOBUTYLALUMINUM IN GAS PHASE [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1969, 91 (11) : 2867 - &

[5] FLEMING CG, 1988, MATER RES SOC S P, V101, P183

[6] SELF-CONSISTENT MOLECULAR-ORBITAL METHODS .23. A POLARIZATION-TYPE BASIS SET FOR 2ND-ROW ELEMENTS [J]. JOURNAL OF CHEMICAL PHYSICS, 1982, 77 (07) : 3654 - 3665

[7] STRUCTURE OF SELECTIVE LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED FILMS OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1243 - 1250

[8] ALUMINUM FILMS PREPARED BY METAL ORGANIC LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1984, 114 (04) : 367 - 377

[9] Hariharan P.C., 1972, CHEM PHYS LETT, V66, P217

[10] Hehre W. J., 1986, AB INITIO MOL ORBITA, P1