MECHANISMS FOR SELECTIVITY LOSS DURING TUNGSTEN CHEMICAL VAPOR-DEPOSITION ON SI AND SIO2

被引:5
作者
CREIGHTON, JR
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.574522
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:1739 / 1740
页数:2
相关论文
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