MECHANISMS FOR SELECTIVITY LOSS DURING TUNGSTEN CHEMICAL VAPOR-DEPOSITION ON SI AND SIO2

被引：5

作者：

CREIGHTON, JR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574522

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1739 / 1740

页数：2

共 9 条

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[2]

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[3] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J].

BROADBENT, EK ;

RAMILLER, CL .

[4]

CREIGHTON JR, 1986, 1986 P WORKSH TUNGST

[5]

MILLER NE, 1982, SOLID STATE TECHNOL, V25, P85

[6]

MILLER NE, 1980, SOLID STATE TECHNOL, V23, P79

[7]

MORIYA T, 1986, 1985 P WORKSH TUNGST, P21

[8] KINETICS AND MECHANISM OF SELECTIVE TUNGSTEN DEPOSITION BY LPCVD [J].

PAULEAU, Y ;

LAMI, P .

[9]

SHAW JM, 1970, RCA REV, V31, P306