SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN

[1] VAPOR DEPOSITION OF TUNGSTEN BY HYDROGEN REDUCTION OF TUNGSTEN HEXAFLUORIDE - PROCESS VARIABLES AND PROPERTIES OF DEPOSIT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 561 - &

[2] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543

[3] KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 559 - 565

[4] CHEUNG H, 1972, 3RD P INT C CHEM VAP, P136

[5] CROWELL CR, 1965, T METALL SOC AIME, V233, P478

[6] CUOMO JJ, 1971, Patent No. 1330720

[7] EHRLICH G, 1963, METAL SURFACES, P236

[8] Gargini P. A., 1981, International Electron Devices Meeting, P54

[9] GARGINI PA, 1981, EL SOC EXT ABST, V81, P924

[10] MOBILITY AND ADSORPTION OF HYDROGEN ON TUNGSTEN [J]. JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (05) : 1147 - 1164

[1] VAPOR DEPOSITION OF TUNGSTEN BY HYDROGEN REDUCTION OF TUNGSTEN HEXAFLUORIDE - PROCESS VARIABLES AND PROPERTIES OF DEPOSIT [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (06) : 561 - &

[2] KINETICS OF TUNGSTEN DEPOSITION BY REACTION OF WF6 AND HYDROGEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) : 1534 - 1543

[3] KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (04) : 559 - 565

[4] CHEUNG H, 1972, 3RD P INT C CHEM VAP, P136

[5] CROWELL CR, 1965, T METALL SOC AIME, V233, P478

[6] CUOMO JJ, 1971, Patent No. 1330720

[7] EHRLICH G, 1963, METAL SURFACES, P236

[8] Gargini P. A., 1981, International Electron Devices Meeting, P54

[9] GARGINI PA, 1981, EL SOC EXT ABST, V81, P924

[10] MOBILITY AND ADSORPTION OF HYDROGEN ON TUNGSTEN [J]. JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (05) : 1147 - 1164