EFFECT OF SILICON ON CUPROUS OXIDE

被引:2
作者
NEMOTO, T
NAKANO, T
机构
关键词
D O I
10.1143/JJAP.6.543
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:543 / &
相关论文
共 4 条
[1]   DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].
CORBETT, JW ;
WATKINS, GD ;
CHRENKO, RM ;
MCDONALD, RS .
PHYSICAL REVIEW, 1961, 121 (04) :1015-&
[2]   FAR-INFRARED PROPERTIES OF CUPROUS OXIDE [J].
HELTEMES, EC .
PHYSICAL REVIEW, 1966, 141 (02) :803-&
[3]   INFRARED ABSORPTION AND OXYGEN CONTENT IN SILICON AND GERMANIUM [J].
KAISER, W ;
KECK, PH ;
LANGE, CF .
PHYSICAL REVIEW, 1956, 101 (04) :1264-1268
[4]   PRODUCTION OF CUPROUS OXIDE SINGLE CRYSTAL BY MELT [J].
KINOSHITA, A ;
NAKANO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (11) :1121-+