2-PHONON ASSISTED FREE EXCITON RECOMBINATION RADIATION FROM INTRINSIC SILICON

被引：39

作者：

VOUK, MA ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

机构：

[1] UNIV LONDON,KINGS COLL,WHEATSTONE PHYS LAB,LONDON WC2R 2LS,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 18期

关键词：

D O I：

10.1088/0022-3719/10/18/031

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3689 / 3699

页数：11

共 39 条

[1] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON
BLUDAU, W
ONTON, A
HEINKE, W
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848
[2] CAPIZZI M, 1976, 13TH P INT C PHYS SE, P857
[3] PHONON-ASSISTED TUNNELING IN SILICON AND GERMANIUM ESAKI JUNCTIONS
CHYNOWETH, AG
THOMAS, DE
LOGAN, RA
[J]. PHYSICAL REVIEW, 1962, 125 (03): : 877 - &
[4] INHOMOGENEOUS BROADENING OF EDGE RECOMBINATION RADIATION
DAVIES, G
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 883 - &
[5] INTRINSIC AND EXTRINSIC RECOMBINATION RADIATION FROM NATURAL AND SYNTHETIC ALUMINUM-DOPED DIAMOND
DEAN, PJ
LIGHTOWLERS, EC
WIGHT, DR
[J]. PHYSICAL REVIEW, 1965, 140 (1A): : A352 - +
[6] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM
DEAN, PJ
HAYNES, JR
FLOOD, WF
[J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &
[7] VALLEY-ORBIT SPLITTING OF INDIRECT FREE EXCITON IN SILICON
DEAN, PJ
YAFET, Y
HAYNES, JR
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 837 - &
[8] DEAN PJ, 1976, J LUMIN, V14, P55, DOI 10.1016/0022-2313(76)90037-5
[9] Dolling G., 1963, INELASTIC SCATTERING, VII, P37
[10] 2-PHONON INDIRECT TRANSITIONS AND LATTICE SCATTERING IN SI
DUMKE, WP
[J]. PHYSICAL REVIEW, 1960, 118 (04): : 938 - 939