COMPLEMENTARY-MOS LOW-POWER LOW-VOLTAGE INTEGRATED BINARY COUNTER

被引：12

作者：

LEUENBER.F

VITTOZ, E

机构：

[1] Centre Electronique Horloger SA, Neuchâtel

来源：

PROCEEDINGS OF THE IEEE | 1969年 / 57卷 / 09期

关键词：

D O I：

10.1109/PROC.1969.7331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated complementary MOS-transistor binary counter stage, particularly suited to low-power low-voltage applications, has been realized in monolithic form. The topology of the circuit allows one to group together all p-channel MOSTs and all n-channel MOSTs within two distinct surface areas. This feature results in an appreciable reduction of the surface necessary for a given circuit function. Dynamic current consumption is about 10 nA per kHz at a supply voltage of 1.35 volts. The complementary type of substrate is obtained by etching and epitaxially refilling wells in the original substrate material. Technological problems which had to be solved in order to achieve low-power low-voltage operation in complementary integrated MOS circuits will be discussed. © 1969 IEEE. All rights reserved.

引用

页码：1528 / &

共 7 条

[1] BURNS JR, 1964, RCA REV, V25, P627
[2] EXPANDED CONTACTS AND INTERCONNEXIONS TO MONOLITHIC SILICON INTEGRATED CIRCUITS
CUNNINGHAM, JA
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (09) : 735 - +
[3] KRIEGER M, 1967, BASIC SWITCHING CIRC, pCH3
[4] DEPENDENCE OF THRESHOLD VOLTAGE OF SILICON P-CHANNEL MOSFETS ON CRYSTAL ORIENTATION
LEUENBERGER, F
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (12): : 1985 - +
[5] RAPP AK, 1967, ISSCC DIGEST, P52
[6] REVESZ AG, 1968, RCA REV, V29, P22
[7] Wanlass FM., 1963, IEEE SOLID STATE CIR, pp 32, DOI [10.1109/ISSCC.1963.1157450, DOI 10.1109/ISSCC.1963.1157450]

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