HOT-ELECTRON PHOTO-LUMINESCENCE IN GAAS CRYSTALS

[1] Al'perovich V. P., 1978, Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V28, P551

[2] PIEZORESISTANCE AND CONDUCTION-BAND MINIMA OF GAAS [J]. PHYSICAL REVIEW B, 1978, 17 (02) : 741 - 751

[3] BEBB HB, 1977, SEMICONDUCTORS SEMIM, V8, P261

[4] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[5] Conwell E M, 1967, HIGH FIELD TRANSPORT

[6] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[7] DETERMINATION OF INDIRECT BAND EDGE OF GAAS BY QUANTUM-WELL BANDFILLING (LZ-100 A) [J]. SOLID STATE COMMUNICATIONS, 1978, 27 (05) : 531 - 533

[8] DYMNIKOV VD, 1967, SOV PHYS JETP, V44, P1252

[9] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[10] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261

[1] Al'perovich V. P., 1978, Pis'ma v Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V28, P551

[2] PIEZORESISTANCE AND CONDUCTION-BAND MINIMA OF GAAS [J]. PHYSICAL REVIEW B, 1978, 17 (02) : 741 - 751

[3] BEBB HB, 1977, SEMICONDUCTORS SEMIM, V8, P261

[4] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1966, 145 (02): : 620 - &

[5] Conwell E M, 1967, HIGH FIELD TRANSPORT

[6] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J]. PHYSICAL REVIEW, 1968, 166 (03): : 797 - +

[7] DETERMINATION OF INDIRECT BAND EDGE OF GAAS BY QUANTUM-WELL BANDFILLING (LZ-100 A) [J]. SOLID STATE COMMUNICATIONS, 1978, 27 (05) : 531 - 533

[8] DYMNIKOV VD, 1967, SOV PHYS JETP, V44, P1252

[9] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[10] BAND STRUCTURE OF INDIUM ANTIMONIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) : 249 - 261