BORON-IMPLANTED SILICON RESISTORS

被引：5

作者：

KU, SM ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

关键词：

D O I：

10.1016/0038-1101(77)90168-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：803 / 812

页数：10

共 18 条

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[5]

Hofker W. K., 1973, Applied Physics, V2, P265, DOI 10.1007/BF00889509

[6]

HOFKER WK, 1975, ION IMPLANTATION SEM, P201

[7]

KENNEDY DP, 1968, IBM J RES DEVELOP, V12, P879

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LAWRENCE, JE .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (04) :405-&

[9] HIGH VALUE IMPLANTED RESISTORS FOR MICROCIRCUITS [J].

MACDOUGA.JD ;

MANCHEST.KE ;

ROUGHAN, PE .

[10]

MICHEL AE, UNPUBLISHED