DETERMINATION OF THE TOTAL EMITTANCE OF NORMAL-TYPE GAAS WITH APPLICATION TO CZOCHRALSKI GROWTH

[11] INFRA-RED ABSORPTION IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1956, 19 : 107 - 155

[12] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS .4. INTER-CONDUCTION BAND TRANSITIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) : 1596 - &

[13] Jenkins F. A., 1976, FUNDAMENTALS OPTICS

[14] OPTICAL ABSORPTION IN CHROMIUM DOPED HIGH RESISTIVITY GAAS IN 0.6 TO 1.5 EV RANGE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 504 - &

[15] JORDAN AS, 1980, J CRYST GROWTH, V49

[16] JORDAN AS, 1980, BELL SYST TECH J, V59

[17] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 354 - 356

[18] THERMAL RADIATION FROM PARTIALLY TRANSPARENT REFLECTING BODIES [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1950, 40 (06) : 376 - 380

[19] MILVIDSK.MG, 1966, FIZ TVERD TELA+, V7, P2784

[20] Moss T. S., 1973, SEMICONDUCTOR OPTO E, DOI 10.1016/C2013-0-04197-7

[11] INFRA-RED ABSORPTION IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1956, 19 : 107 - 155

[12] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS .4. INTER-CONDUCTION BAND TRANSITIONS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) : 1596 - &

[13] Jenkins F. A., 1976, FUNDAMENTALS OPTICS

[14] OPTICAL ABSORPTION IN CHROMIUM DOPED HIGH RESISTIVITY GAAS IN 0.6 TO 1.5 EV RANGE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (05) : 504 - &

[15] JORDAN AS, 1980, J CRYST GROWTH, V49

[16] JORDAN AS, 1980, BELL SYST TECH J, V59

[17] ANALYTIC APPROXIMATIONS FOR FERMI ENERGY OF AN IDEAL FERMI GAS [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 354 - 356

[18] THERMAL RADIATION FROM PARTIALLY TRANSPARENT REFLECTING BODIES [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1950, 40 (06) : 376 - 380

[19] MILVIDSK.MG, 1966, FIZ TVERD TELA+, V7, P2784

[20] Moss T. S., 1973, SEMICONDUCTOR OPTO E, DOI 10.1016/C2013-0-04197-7