ELECTROABSORPTION ON THE INDIRECT GAP OF AS2SE3

被引：13

作者：

ALTHAUS, HL

WEISER, G

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 99卷 / 01期

关键词：

D O I：

10.1002/pssb.2220990127

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：277 / 284

页数：8

共 18 条

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[2] ALTHAUS HL, 1980, PHYS STAT SOL B, V99
[3] INFLUENCE OF ELECTRIC FIELD ON EXCITON ABSORPTION IN GERMANIUM
ARONOV, AG
MOCHAN, IV
ZEMSKII, VI
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 45 (02): : 395 - &
[4] BARDEEN J, 1954, PHOTOCONDUCTIVITY C, P146
[5] ELECTRONIC-STRUCTURE OF ARSENIC CHALCOGENIDES
BULLETT, DW
[J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1683 - 1692
[6] ABSORPTION AND ELECTROABSORPTION OF TRIGONAL SELENIUM NEAR FUNDAMENTAL ABSORPTION-EDGE
FISCHER, R
[J]. PHYSICAL REVIEW B, 1972, 5 (08): : 3087 - &
[7] KOLOMIETS BT, 1975, SOV PHYS SEMICOND+, V9, P465
[8] KOLOMIETS BT, 1975, FIZ TEKH POLUPROV, V9, P710
[9] KOLOMIETS BT, 1972, J NON-CRYST SOLIDS, V8, P1010
[10] TEMPERATURE-DEPENDENT ELECTROABSORPTION ON INDIRECT EDGE OF TRIGONAL SELENIUM
LINGELBACH, W
TREUSCH, J
STUKE, J
WEISER, G
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 243 - +