ELECTRICAL AND OPTICAL CHARACTERIZATION OF SBSNO2

被引：221

作者：

HE, YS

CAMPBELL, JC

MURPHY, RC

ARENDT, MF

SWINNEA, JS

机构：

[1] UNIV TEXAS,DEPT CHEM & BIOCHEM,AUSTIN,TX 78712

[2] UNIV TEXAS,DEPT MAT SCI & ENGN,AUSTIN,TX 78712

来源：

JOURNAL OF MATERIALS RESEARCH | 1993年 / 8卷 / 12期

关键词：

D O I：

10.1557/JMR.1993.3131

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Films of Sb:SnO2 have been formed by vacuum e-beam evaporation. The structural, electrical, and optical properties of these films have been investigated with respect to annealing time and temperature. After heat treatment in an oxygen atmosphere, thin films with a peak transmittance of 98% and 4-9 x 10(-3) OMEGAcm resistivity have been obtained. The barrier heights and energy band diagrams of Sb:SnO2/Si n-n and p-n heterojunctions have been determined by C-V measurements.

引用

页码：3131 / 3134

页数：4

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