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ELECTRICAL AND OPTICAL PROPERTIES OF SI-SNO2 HETEROJUNCTIONS
被引:64
作者
:
NISHINO, T
论文数:
0
引用数:
0
h-index:
0
NISHINO, T
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
HAMAKAWA, Y
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1970年
/ 9卷
/ 09期
关键词
:
D O I
:
10.1143/JJAP.9.1085
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1085 / &
相关论文
共 17 条
[1]
AITCHINSON RE, 1954, AUSTRAL J APPL SCI, V75, P10
[2]
EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 341
-
&
[3]
THE STUDY OF THE OPTICAL PROPERTIES OF CONDUCTING TIN OXIDE FILMS AND THEIR INTERPRETATION IN TERMS OF A TENTATIVE BAND SCHEME
ARAI, T
论文数:
0
引用数:
0
h-index:
0
ARAI, T
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1960,
15
(05)
: 916
-
927
[4]
TRANSPORT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS
ARIZUMI, T
论文数:
0
引用数:
0
h-index:
0
ARIZUMI, T
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1969,
8
(06)
: 749
-
+
[5]
CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
CHANG, LL
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(09)
: 721
-
&
[6]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
APPLIED PHYSICS LETTERS,
1966,
9
(06)
: 242
-
&
[7]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
: 329
-
&
[8]
GAAS-INSB GRADED-GAP HETEROJUNCTION
HINKLEY, ED
论文数:
0
引用数:
0
h-index:
0
HINKLEY, ED
REDIKER, RH
论文数:
0
引用数:
0
h-index:
0
REDIKER, RH
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 671
-
&
[9]
ANOMALOUS ELECTRO-RELFECTANCE SIGNALS NEAR FUNDAMENTAL EDGE OF ZINC SELENIDE
IKEDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
IKEDA, K
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
HAMAKAWA, Y
KOMIYA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
KOMIYA, H
IBUKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
IBUKI, S
[J].
PHYSICS LETTERS A,
1969,
A 28
(09)
: 647
-
&
[10]
OPTICAL AND ELECTRICAL PROPERTIES OF TIN OXIDE FILMS
ISHIGURO, K
论文数:
0
引用数:
0
h-index:
0
ISHIGURO, K
SASAKI, T
论文数:
0
引用数:
0
h-index:
0
SASAKI, T
ARAI, T
论文数:
0
引用数:
0
h-index:
0
ARAI, T
IMAI, I
论文数:
0
引用数:
0
h-index:
0
IMAI, I
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1958,
13
(03)
: 296
-
304
←
1
2
→
共 17 条
[1]
AITCHINSON RE, 1954, AUSTRAL J APPL SCI, V75, P10
[2]
EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
论文数:
0
引用数:
0
h-index:
0
ANDERSON, RL
[J].
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
: 341
-
&
[3]
THE STUDY OF THE OPTICAL PROPERTIES OF CONDUCTING TIN OXIDE FILMS AND THEIR INTERPRETATION IN TERMS OF A TENTATIVE BAND SCHEME
ARAI, T
论文数:
0
引用数:
0
h-index:
0
ARAI, T
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1960,
15
(05)
: 916
-
927
[4]
TRANSPORT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS
ARIZUMI, T
论文数:
0
引用数:
0
h-index:
0
ARIZUMI, T
HIROSE, M
论文数:
0
引用数:
0
h-index:
0
HIROSE, M
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1969,
8
(06)
: 749
-
+
[5]
CONDUCTION PROPERTIES OF GE-GAAS1-XPX N-N HETEROJUNCTIONS
CHANG, LL
论文数:
0
引用数:
0
h-index:
0
CHANG, LL
[J].
SOLID-STATE ELECTRONICS,
1965,
8
(09)
: 721
-
&
[6]
TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS
CROWELL, CR
论文数:
0
引用数:
0
h-index:
0
CROWELL, CR
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
APPLIED PHYSICS LETTERS,
1966,
9
(06)
: 242
-
&
[7]
METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM
GOODMAN, AM
论文数:
0
引用数:
0
h-index:
0
GOODMAN, AM
[J].
JOURNAL OF APPLIED PHYSICS,
1963,
34
(02)
: 329
-
&
[8]
GAAS-INSB GRADED-GAP HETEROJUNCTION
HINKLEY, ED
论文数:
0
引用数:
0
h-index:
0
HINKLEY, ED
REDIKER, RH
论文数:
0
引用数:
0
h-index:
0
REDIKER, RH
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(07)
: 671
-
&
[9]
ANOMALOUS ELECTRO-RELFECTANCE SIGNALS NEAR FUNDAMENTAL EDGE OF ZINC SELENIDE
IKEDA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
IKEDA, K
HAMAKAWA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
HAMAKAWA, Y
KOMIYA, H
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
KOMIYA, H
IBUKI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Faculty of Engineering Science, Osaka University, Toyonaka, Osaka
IBUKI, S
[J].
PHYSICS LETTERS A,
1969,
A 28
(09)
: 647
-
&
[10]
OPTICAL AND ELECTRICAL PROPERTIES OF TIN OXIDE FILMS
ISHIGURO, K
论文数:
0
引用数:
0
h-index:
0
ISHIGURO, K
SASAKI, T
论文数:
0
引用数:
0
h-index:
0
SASAKI, T
ARAI, T
论文数:
0
引用数:
0
h-index:
0
ARAI, T
IMAI, I
论文数:
0
引用数:
0
h-index:
0
IMAI, I
[J].
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN,
1958,
13
(03)
: 296
-
304
←
1
2
→