HIGH-TEMPERATURE SUPERCONDUCTIVE DEVICES ON SAPPHIRE

被引：20

作者：

LIANG, GC ^{[1
]}

WITHERS, RS ^{[1
]}

COLE, BF ^{[1
]}

NEWMAN, N ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,DEPT MAT SCI,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1994年 / 42卷 / 01期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1109/22.265525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The low-loss and uniform dielectric properties of sapphire make it attractive for high-performance microwave devices using high-temperature superconductors. YBa2Cu3O7-delta films have been deposited on oxide-buffered 5-cm-diameter wafers and demonstrated a surface resistance of 0.5 mOMEGA at 10 GHz and 77 K. Long (9-ns) delay lines have for the first time been produced on these substrates and have a measured insertion loss of 1.5 dB at 6 GHz and 77 K. Design techniques appropriate for the dielectric anisotropy of sapphire are discussed.

引用

收藏

页码：34 / 40

页数：7

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