LARGE-AREA YBA2CU3O7-DELTA THIN-FILMS ON SAPPHIRE FOR MICROWAVE APPLICATIONS

被引：101

作者：

COLE, BF ^{[1
]}

LIANG, GC ^{[1
]}

NEWMAN, N ^{[1
]}

CHAR, K ^{[1
]}

ZAHARCHUK, G ^{[1
]}

机构：

[1] SANDIA NATL LABS,DEPT 1154,ALBUQUERQUE,NM 87185

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have deposited YBa2Cu3O7-delta(YBCO) films with low microwave surface resistance (R(s)) on 5-cm-diam, oxide-buffered sapphire substrates by planar magnetron sputtering. MgO buffer layers are used on M-plane (1010BAR) sapphire, and R-plane (1102BAR) sapphire is buffered by CeO2. R(s) values of 450-620 muOMEGA at 77 K and 10 GHz were measured across an entire 5-cm diam YBCO film on M-plane sapphire. For YBCO on R-plane sapphire, R(s) values at 77 K and 10 GHz were 950 muOMEGA for a 5-cm-diam wafer and 700 muOMEGA for 1 X 1 CM2 samples.

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收藏

页码：1727 / 1729

页数：3

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