JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
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1993年
/
32卷
/
12B期
关键词:
REACTIVE ION ETCHING;
II-VI COMPOUNDS;
ETCH PROFILE;
UNDERCUT;
QUANTUM DOT;
SIDE WALL;
MICROLOADING;
PROXIMITY EFFECT;
D O I:
10.1143/JJAP.32.6233
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The profiles of etched quantum dots are affected by both the geometrical pattern in which the dots are arranged and by the etching conditions. The dots were made by reactive ion etching (RIE) of ZnTe in a mixture of CH4 and H-2. In an uniform array of dots, the degree of undercut of the profile increases with the dot spacing, and is proportional to the etched area. When one dot is surrounded by a clearing with no dots, the degree of undercut of the profile is proportional to the radius of the clearing. The addition of a small amount Of 02 was found to be effective in controlling the undercut. Using these techniques, it is now possible to create high density arrays of vertical quantum dots in II-VI materials.