REACTIVE ION ETCHED II-VI QUANTUM DOTS - DEPENDENCE OF ETCHED PROFILE ON PATTERN GEOMETRY

被引:14
作者
TSUTSUI, K
HU, EL
WILKINSON, CDW
机构
[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
[2] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12B期
关键词
REACTIVE ION ETCHING; II-VI COMPOUNDS; ETCH PROFILE; UNDERCUT; QUANTUM DOT; SIDE WALL; MICROLOADING; PROXIMITY EFFECT;
D O I
10.1143/JJAP.32.6233
中图分类号
O59 [应用物理学];
学科分类号
摘要
The profiles of etched quantum dots are affected by both the geometrical pattern in which the dots are arranged and by the etching conditions. The dots were made by reactive ion etching (RIE) of ZnTe in a mixture of CH4 and H-2. In an uniform array of dots, the degree of undercut of the profile increases with the dot spacing, and is proportional to the etched area. When one dot is surrounded by a clearing with no dots, the degree of undercut of the profile is proportional to the radius of the clearing. The addition of a small amount Of 02 was found to be effective in controlling the undercut. Using these techniques, it is now possible to create high density arrays of vertical quantum dots in II-VI materials.
引用
收藏
页码:6233 / 6236
页数:4
相关论文
共 4 条
  • [1] REACTIVE ION ETCHING OF II-VI SEMICONDUCTORS USING A MIXTURE OF METHANE AND HYDROGEN
    FOAD, MA
    SMART, AP
    WATT, M
    TORRES, CMS
    WILKINSON, CDW
    [J]. ELECTRONICS LETTERS, 1991, 27 (01) : 73 - 75
  • [2] HIGH-RESOLUTION DRY ETCHING OF ZINC TELLURIDE - CHARACTERIZATION OF ETCHED SURFACES BY X-RAY PHOTOELECTRON-SPECTROSCOPY, PHOTOLUMINESCENCE AND RAMAN-SCATTERING
    FOAD, MA
    WATT, M
    SMART, AP
    TORRES, CMS
    WILKINSON, CDW
    KUHN, W
    WAGNER, HP
    BAUER, S
    LEIDERER, H
    GEBHARDT, W
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (9A) : A115 - A122
  • [3] BLUE-GREEN LASER-DIODES
    HAASE, MA
    QIU, J
    DEPUYDT, JM
    CHENG, H
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1272 - 1274
  • [4] TSUTSUI K, 1993, IN PRESS J VAC SCI T