GREEN LASER-DIODES WITH CHANNELED-SUBSTRATE PLANAR WAVE-GUIDE STRUCTURE

被引：13

作者：

KAWASUMI, T

NAKAYAMA, N

ISHIBASHI, A

MORI, Y

机构：

[1] Sony Corporation Research Center, Yokohama 240, Fujitsuka-cho 174, Hodogaya-ku

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 19期

关键词：

II-VI SEMICONDUCTORS; VISIBLE SEMICONDUCTOR LASERS; MOLECULAR BEAM EPITAXIAL GROWTH;

D O I：

10.1049/el:19951111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first II-VI index guided inner stripe laser diodes grown by one-step molecular beam epitaxy (MBE) on a structured GaAs substrate have been fabricated. The laser, operating at a wavelength of 512 nm, consists of a ZnCdSe/ZnSSe/ZnMgSSe single quantum-well (SQW) separate-confinement heterostructure (SCH) grown on a 6 mu m wide channelled substrate containing a p-GaAs current blocking layer on (100) n-GaAs. The threshold current density was as low as 350 A/cm(2) for the 1 mm long as-cleaved device under room temperature pulsed conditions.

引用

页码：1667 / 1668

页数：2

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