MODELING OF CHEMICAL-MECHANICAL POLISHING - A REVIEW

被引:162
作者
NANZ, G [1 ]
CAMILLETTI, LE [1 ]
机构
[1] DIGITAL EQUIPMENT CORP,HUDSON,MA 01749
关键词
D O I
10.1109/66.475179
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper gives a survey of the status of today's modeling of chemical-mechanical polishing (CMP). Most existing models describe specific aspects of CMP, such as the flow of the slurry or the bending of the polishing pad. However, as yet no model describes the entire available process. This paper critically reviews existing models with respect to generality. In particular, the different assumptions of the models are investigated. Furthermore, the models are compared and the controversial treatment of physical effects is discussed.
引用
收藏
页码:382 / 389
页数:8
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