BEHAVIOR OF BURIED OXYGEN IMPLANTED LAYERS IN HIGHLY DOPED GAAS

Highly doped GaAs substrate material (doping level ≥ 1018 cm-3) has been implanted with 350 keV O+ ions with doses of 1014 - 1016 cm-2 to produce high resistivity layers which are stable at high temperatures. LPE growth of flat GaAs epilayers onto the implanted wafers was achieved up to doses of about 1 × 1015 O+/cm2 and 5 × 1015O+/cm2 for RT and 200°C implants, respectively. N-o-n and p-o-n structures (o: oxygen implanted) were fabricated in which breakdown voltages of up to 15 V were obtained. Examples for application of this isolation technique are shown. © 1979.