PRECISE MEASUREMENTS OF OXYGEN-CONTENT - OXYGEN VACANCIES IN TRANSPARENT CONDUCTING INDIUM OXIDE-FILMS

被引：108

作者：

BELLINGHAM, JR ^{[1
]}

MACKENZIE, AP ^{[1
]}

PHILLIPS, WA ^{[1
]}

机构：

[1] GEC HIRST RES LABS,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 22期

关键词：

D O I：

10.1063/1.104858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxygen deficiency with carrier concentration in thin films of amorphous indium oxide. This has shown that there are ten times as many oxygen vacancies as would be expected from the carrier concentration measurements, giving a doping efficiency of 0.1. It is therefore clear that the doping mechanism is more complex than the usual picture of every oxygen vacancy producing two free electrons.

引用

页码：2506 / 2508

页数：3

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