PHASE-SHIFT AND FREQUENCY-DOUBLING ON INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION - ONE-BEAM DYNAMICAL CALCULATIONS FOR GE ON GE(111) SURFACE

Reflectivities of a high-energy electron beam are calculated under the one-beam condition with varying growing layer thickness and glancing angle of the incident electron beam as an example of Ge growth on a Ge(111) surface. The potential in the growing layer is assumed to be proportional to layer coverage. In order to investigate characteristic behaviors of reflectivity, a simple ''birth-death model'' is used to simulate the growth mode. It is revealed that the phase of diffracted electron waves in the growing layers play an important role in the understanding of ''phase shift'', ''frequency-doubling'' and also characteristic change of rocking curves, which are observed in experiments.