INTRODUCTION RATES OF ELECTRICALLY ACTIVE DEFECTS IN N- AND P-TYPE SILICON BY ELECTRON AND NEUTRON IRRADIATION

被引：90

作者：

STEIN, HJ

GERETH, R

机构：

来源：

关键词：

D O I：

10.1063/1.1656690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2890 / +

页数：1

共 66 条

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