SILICA-BASED OXIDE SYSTEMS .2. DETERMINATION OF SILICA-BASED, LOW FLOW TEMPERATURE GLASSES FOR ELECTRONIC APPLICATION FROM RELATIONS BETWEEN GLASS-TRANSITION, FLOW, AND LIQUIDUS TEMPERATURES

被引：13

作者：

BARET, G ^{[1
]}

MADAR, R ^{[1
]}

BERNARD, C ^{[1
]}

机构：

[1] ECOLE NATL SUPER PHYS GRENOBLE,MAT & GENIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 09期

关键词：

D O I：

10.1149/1.2086067

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The relations between glass transition and flow temperatures (T(g) and T(fl), respectively) of vitreous silica-based oxides and the liquidus temperature (T(liq)) of crystallized phases were reviewed and studied. Boron, phosphorus, germanium, and arsenic oxides were studied as silica doping agents. On the basis of binary phase diagrams, experimentation, and modeling, ternary and quaternary phase diagrams were computed, providing knowledge of liquidus temperatures for any composition of the materials considered. A dilatometric study on bulk samples in the three chemical systems (SiO2-B2O3-P2O5, SiO2-B2O3-GeO2, and SiO2-B2O3-P2O5-GeO2) showed that, for a given set of constituents, T(fl) and T(liq) have their minimum value for compositions very close to each other. In both SiO2-B2O3-P2O5 and SiO2-B2O3-GeO2 mixtures, the composition giving the lowest T(fl) value is proposed for very large scale integrated planarization layers and there are indications of probable low T(fl) values in the SiO2-B2O3-As2O3 system.

引用

页码：2836 / 2838

页数：3