INTERACTION OF PHOTORESISTS WITH METALS AND OXIDES DURING RF SPUTTER-ETCHING

Results show that the pretreatment of the photoresist before sputter-etching clearly affects its performance. When prepared under optimum conditions, there is a limit to the maximum bombarding voltage that the photoresist can withstand. When metals and photoresists are sputter-etched simultaneously, the entire target surface is eroded at the same rate, presumably because backscattering converts the surface to a mixture of the materials present.