SI/COSI2/SI STRUCTURES - PSEUDOMORPHISM, INTERFACE STRUCTURES, EPITAXIAL ORIENTATIONS, AND THE CONTROL OF PINHOLES

被引：16

作者：

TUNG, RT

BATSTONE, JL

YALISOVE, SM

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 03期

关键词：

D O I：

10.1149/1.2096749

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：815 / 819

页数：5

共 31 条

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[7] INSITU STUDY OF THE MOLECULAR-BEAM EPITAXY OF COSI2 ON (111) SI BY TRANSMISSION ELECTRON-MICROSCOPY AND DIFFRACTION [J].

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