PHOTOCONDUCTIVITY AND OPTICAL STABILITY OF INTRINSIC MU-C-SI FILMS FORMED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION, REMOTE PECVD

被引：13

作者：

WILLIAMS, MJ ^{[1
]}

WANG, C ^{[1
]}

LUCOVSKY, G ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80226-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

mu-c-Si deposited by RPECVD is n-type with a room temperature dark conductivity of approximately 6 x 10(-4) S/cm and an activation energy of approximately 0.3 eV, due to native donor-like defects. We report conductivity and photoconductivity in B-doped mu-c-Si, emphasizing doping levels that are used to exactly compensate the native defects, and produce a high resistivity, highly photoconductive form of mu-c-Si.

引用

页码：737 / 740

页数：4

共 9 条

[1] LeComber P. G., 1979, Amorphous semiconductors, P251
[2] SOME NEW RESULTS ON TRANSPORT AND DENSITY OF STATE DISTRIBUTION IN GLOW-DISCHARGE MICROCRYSTALLINE SILICON
LECOMBER, PG
WILLEKE, G
SPEAR, WE
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 795 - 798
[3] DEPOSITION OF MU-C-SI AND MU-C-SI-C THIN-FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION
LUCOVSKY, G
WANG, C
NEMANICH, RJ
WILLIAMS, MJ
[J]. SOLAR CELLS, 1991, 30 (1-4): : 419 - 434
[4] LUCOVSKY G, 1991, IN PRESS MRS S P, V219
[5] LUCOVSKY G, 1991, THIN FILM PROCESSES, V2, P565
[6] SPEAR WE, 1984, PHYSICS HYDROGENATED, P63
[7] THE PREPARATION OF MICROCRYSTALLINE SILICON (MU-C-SI) THIN-FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION
WANG, C
WILLIAMS, MJ
LUCOVSKY, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 444 - 449
[8] WILLIAMS MJ, 1991, IN PRESS MRS S P, V219
[9] WILLIAMS MJ, 1991, FEB INT C STAB A SI

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