DEPOSITION OF MU-C-SI AND MU-C-SI-C THIN-FILMS BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR DEPOSITION

This paper describes properties of microcrystalline silicon (mu-c-Si), and microcrystalline silicon-carbon (mu-c-Si-C) thin films formed by the process of remote plasma-enhanced chemical-vapor deposition (PECVD). We discuss: (i) the way that the remote PECVD deposition process is applied to the deposition of mu-c-Si and mu-c-Si-C thin films; (ii) the characterization and properties of the intrinsic and doped mu-c-Si thin film materials; (iii) the characterization and properties of the intrinsic and doped mu-c-Si-C thin film materials; and (iv) the application of remote PECVD mu-c-Si and mu-c-Si-C thin films in device structures.