OPTICAL AND ELECTRICAL-PROPERTIES OF A-SI-H FILMS GROWN BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION (RPECVD)

被引：24

作者：

PARSONS, GN

TSU, DV

LUCOVSKY, G

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(87)90329-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1375 / 1378

页数：4

共 9 条

[1] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H
FRITZSCHE, H
[J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501
[2] KNIGHTS JC, 1980, CRIT REV SOLID STATE, V9, P210
[3] DEPOSITION OF SILICON DIOXIDE AND SILICON-NITRIDE BY REMOTE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION
LUCOVSKY, G
RICHARD, PD
TSU, DV
LIN, SY
MARKUNAS, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 681 - 688
[4] STRUCTURAL INTERPRETATION OF THE VIBRATIONAL-SPECTRA OF A-SI-H ALLOYS
LUCOVSKY, G
NEMANICH, RJ
KNIGHTS, JC
[J]. PHYSICAL REVIEW B, 1979, 19 (04): : 2064 - 2073
[5] LUCOVSKY G, 1987, J NONCRYSTALLINE S 2, V97
[6] PARSONS GN, 1987, IN PRESS J VAC SCI A, V5
[7] THOMPSON MJ, 1984, PHYSICS HYDROGENATED, V1, P119
[8] AR(3P2) INDUCED CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON
TOYOSHIMA, Y
KUMATA, K
ITOH, U
ARAI, K
MATSUDA, A
WASHIDA, N
INOUE, G
KATSUUMI, K
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 584 - 586
[9] PROPERTIES OF THE SI-H BOND-STRETCHING ABSORPTION-BAND IN A-SI-H GROWN BY REMOTE PLASMA ENHANCED CVD (RPECVD)
TSU, DV
LUCOVSKY, G
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 839 - 842