PROPERTIES OF THE SI-H BOND-STRETCHING ABSORPTION-BAND IN A-SI-H GROWN BY REMOTE PLASMA ENHANCED CVD (RPECVD)

被引：44

作者：

TSU, DV

LUCOVSKY, G

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(87)90201-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：839 / 842

页数：4

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