AR(3P2) INDUCED CHEMICAL VAPOR-DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON

被引：30

作者：

TOYOSHIMA, Y

KUMATA, K

ITOH, U

ARAI, K

MATSUDA, A

WASHIDA, N

INOUE, G

KATSUUMI, K

机构：

[1] NATL INST ENVIRONM STUDIES,TSUKUBA-GAKUEN,IBARAKI 305,JAPAN

[2] NIHON UNIV,COLL SCI & TECHNOL,DEPT ELECTR ENGN,FUNABASHI,CHIBA 274,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 06期

关键词：

D O I：

10.1063/1.95914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：584 / 586

页数：3

共 13 条

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[J]. CHEMICAL PHYSICS, 1983, 80 (03) : 351 - 365
[8] PHOTOELECTRON SPECTRA OF METHANE, SILANE, GERMANE AND STANNANE
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[9] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 678 - 679
[10] SETSER DW, 1979, REACTIVE INTERMEDIAT, P151

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