INSITU PHOTOREFLECTANCE STUDY OF THE EFFECTS OF SPUTTER ANNEALING ON THE FERMI LEVEL AT (001) N-TYPE AND PARA-TYPE GAAS-SURFACES

被引：33

作者：

YIN, X ^{[1
]}

CHEN, HM ^{[1
]}

POLLAK, FH ^{[1
]}

CAO, Y ^{[1
]}

MONTANO, PA ^{[1
]}

KIRCHNER, PD ^{[1
]}

PETTIT, GD ^{[1
]}

WOODALL, JM ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 04期

关键词：

D O I：

10.1116/1.585748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a photoreflectance study of the effects of Ar+ sputtering and thermal annealing on the Fermi level (V(F)) on (001) n- and p-type GaAs with large, uniform electric fields. The measurements were performed in situ in an ultrahigh vacuum (UHV) chamber. The effect of the sputtering was to move V(F) from midgap to near the conduction band for both types of material. Subsequent UHV annealing (350-degrees-C) and air exposure restored V(F) its original midgap value. The implication of these observations for various models of Schottky barrier formation will be discussed. Our work also demonstrates the need to simultaneously measure both n- and p-type material in order to obtain unambiguous results.

引用

页码：2114 / 2117

页数：4

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