QUANTITATIVE-ANALYSIS OF DEUTERIUM IMPLANTED IN CRYSTALLINE SILICON AND PYROLYTIC-GRAPHITE BY PULSED XECL LASER DESORPTION

We have investigated the pulsed XeCl laser induced thermal desorption of deuterium implanted in crystalline silicon (c-Si) and highly oriented pyrolytic graphite (HOPG). Calibrations and experimental procedures for the quantitative analysis of deuterium are described. The desorption thresholds are 0.55 +/- 0.09 and 0.43 +/- 0.07 J/cm2 for c-Si and c-axis HOPG, respectively. However, for a-axis HOPG, deuterium is difficult to desorb because of the higher thermal conductivity. As a desorption product from HOPG, CD4 has also been observed. The deuterium evolution in both c-Si and c-axis HOPG has been modeled with the code DTRLAS. It appears to be mainly limited by the detrapping processes with the effective activation energies, E(B) = 1.2 +/- 0.3 eV and E(B) = 2.35 +/- 0.55 eV for c-Si and c-axis HOPG, respectively.